Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

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題名:	Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics
作者:	Chien,CY;Chang,YJ;Chang,JE;Lee,MS;Chen,WY;Hsu,TM;Li,PW
貢獻者:	電機工程學系
關鍵詞:	PHOTOLUMINESCENCE;NANOCRYSTALS;CONFINEMENT;MATRICES;EXCITONS
日期:	2010
上傳時間:	2012-03-28 10:11:37 (UTC+8)
出版者:	國立中央大學
摘要:	We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si(1-x)Ge(x), oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.
關聯:	NANOTECHNOLOGY
顯示於類別:	[電機工程學系] 期刊論文

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