English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 23031917      Online Users : 201
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51967


    Title: Low Gate Leakage Current HFET Structure Fabricated by Using a Step-free Airbridge Gate Process
    Authors: Chien,FT;Chan,CL;Wang,CL;Liao,CN;Tsai,YT;Chiu,HC
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:12:05 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Conventional heterostructure field-effect transistors (HFETs) have a high gate leakage current due to the gate electrode being in contact with the exposed channel layer and with the carrier-providing layer on the mesa sidewall. In this study, we use a new step-free (SF) air-bridge gate structure to reduce the gate leakage and improve the breakdown voltage. The proposed structure does not increase any MASKs as compared with the conventional process. In addition, this new structure promises a gate-source capacitance smaller than those of conventional heterostructure FET devices. Consequently, the high-frequency performance of the HFETs using the proposed structure can be improved.
    Relation: JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML212View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明