Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/51992

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51992

Title:	Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics
Authors:	Lo,PY;Li,PW;Chan,YJ
Contributors:	電機工程學系
Keywords:	PERFORMANCE;DEPENDENCE;TFTS
Date:	2010
Issue Date:	2012-03-28 10:12:47 (UTC+8)
Publisher:	國立中央大學
Abstract:	Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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