Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52043

Title:	Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates
Authors:	Chen,KH;Chien,CY;Lai,WT;George,T;Scherer,A;Li,PW
Contributors:	電機工程學系
Keywords:	NANOCRYSTALS;OXIDATION
Date:	2011
Issue Date:	2012-03-28 10:14:01 (UTC+8)
Publisher:	國立中央大學
Abstract:	Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO(2)/Si(3)N(4) substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.
Relation:	CRYSTAL GROWTH & DESIGN
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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