Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

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题名:	Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates
作者:	Chen,KH;Chien,CY;Lai,WT;George,T;Scherer,A;Li,PW
贡献者:	電機工程學系
关键词:	NANOCRYSTALS;OXIDATION
日期:	2011
上传时间:	2012-03-28 10:14:01 (UTC+8)
出版者:	國立中央大學
摘要:	Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO(2)/Si(3)N(4) substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.
關聯:	CRYSTAL GROWTH & DESIGN
显示于类别:	[電機工程學系] 期刊論文

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