English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23114491      Online Users : 535
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52082

    Title: Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO(2) Gate Dielectrics
    Authors: Ho,HC;Fan,TW;Lin,HK
    Contributors: 電機工程學系
    Date: 2011
    Issue Date: 2012-03-28 10:15:00 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This study reports the development of InAs-channel MOSFETs using PECVD-deposited SiO(2) gate dielectrics. Arsenic capping and desorption are applied to as-grown wafers to prevent the formation of native oxides before the gate dielectrics are then deposited. We believe that increased hole confinement in a layer structure effectively suppresses the impact ionization effect, and an output conductance as 18 mS/mm at a drain bias of 2 V is demonstrated. A 2 mu m-gate-length device exhibits dc performances of I(DSS) = 154 mA/mm and g(m) = 189 mS/mm, and rf performances of f(T) = 14.5 GHz and f(MAX) = 24 GHz. The InAs-channel MOS-FET has potential for application in high frequency circuit devices. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594098] All rights reserved.
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明