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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52082


    Title: Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO(2) Gate Dielectrics
    Authors: Ho,HC;Fan,TW;Lin,HK
    Contributors: 電機工程學系
    Keywords: TRANSPORT;HEMTS;GAAS
    Date: 2011
    Issue Date: 2012-03-28 10:15:00 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This study reports the development of InAs-channel MOSFETs using PECVD-deposited SiO(2) gate dielectrics. Arsenic capping and desorption are applied to as-grown wafers to prevent the formation of native oxides before the gate dielectrics are then deposited. We believe that increased hole confinement in a layer structure effectively suppresses the impact ionization effect, and an output conductance as 18 mS/mm at a drain bias of 2 V is demonstrated. A 2 mu m-gate-length device exhibits dc performances of I(DSS) = 154 mA/mm and g(m) = 189 mS/mm, and rf performances of f(T) = 14.5 GHz and f(MAX) = 24 GHz. The InAs-channel MOS-FET has potential for application in high frequency circuit devices. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594098] All rights reserved.
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS
    Appears in Collections:[電機工程學系] 期刊論文

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