English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23032138      Online Users : 433
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52086


    Title: Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots
    Authors: Chien,CY;Chang,YJ;Chen,KH;Lai,WT;George,T;Scherer,A;Li,PW
    Contributors: 電機工程學系
    Keywords: CONFINEMENT;GERMANIUM;SIGE
    Date: 2011
    Issue Date: 2012-03-28 10:15:06 (UTC+8)
    Publisher: 國立中央大學
    Abstract: A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si(3)N(4) layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers. A two-step mechanism of dissolution of Si within the Ge QDs prior to oxidation is proposed.
    Relation: NANOTECHNOLOGY
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML232View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明