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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52089


    Title: Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors
    Authors: Lin,YC;Chung,HL;Ku,JT;Chen,CY;Chien,KF;Fan,WC;Lee,L;Chyi,JI;Chou,WC;Chang,WH;Chen,WK
    Contributors: 電機工程學系
    Keywords: ALLOYS
    Date: 2011
    Issue Date: 2012-03-28 10:15:11 (UTC+8)
    Publisher: 國立中央大學
    Abstract: We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe(1-x)O(x) (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe(1-x)O(x) decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
    Relation: JOURNAL OF CRYSTAL GROWTH
    Appears in Collections:[電機工程學系] 期刊論文

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