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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52937


    Title: Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
    Authors: Chen,CW;Hung,SC;Lee,CH;Tun,CJ;Kuo,CH;Yang,MD;Yeh,CW;Wu,CH;Chi,GC
    Contributors: 物理學系
    Keywords: INGAN/GAN LASER-DIODES;HYDROTHERMAL PROCESS;EPITAXIAL LAYER;QUANTUM-WELLS;SAPPHIRE;EMISSION
    Date: 2011
    Issue Date: 2012-06-11 10:50:50 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America
    Relation: OPTICAL MATERIALS EXPRESS
    Appears in Collections:[物理學系] 期刊論文

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