Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52937

Title:	Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
Authors:	Chen,CW;Hung,SC;Lee,CH;Tun,CJ;Kuo,CH;Yang,MD;Yeh,CW;Wu,CH;Chi,GC
Contributors:	物理學系
Keywords:	INGAN/GAN LASER-DIODES;HYDROTHERMAL PROCESS;EPITAXIAL LAYER;QUANTUM-WELLS;SAPPHIRE;EMISSION
Date:	2011
Issue Date:	2012-06-11 10:50:50 (UTC+8)
Publisher:	國立中央大學
Abstract:	Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America
Relation:	OPTICAL MATERIALS EXPRESS
Appears in Collections:	[Department of Physics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	428	View/Open

社群 sharing