Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

NCU Institutional Repository > 理學院 > 物理學系 > 期刊論文 > Item 987654321/52937

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52937

題名:	Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
作者:	Chen,CW;Hung,SC;Lee,CH;Tun,CJ;Kuo,CH;Yang,MD;Yeh,CW;Wu,CH;Chi,GC
貢獻者:	物理學系
關鍵詞:	INGAN/GAN LASER-DIODES;HYDROTHERMAL PROCESS;EPITAXIAL LAYER;QUANTUM-WELLS;SAPPHIRE;EMISSION
日期:	2011
上傳時間:	2012-06-11 10:50:50 (UTC+8)
出版者:	國立中央大學
摘要:	Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America
關聯:	OPTICAL MATERIALS EXPRESS
顯示於類別:	[物理學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	431	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing