隨著科技的發展，材料的製作體積也越來越小，所以奈米材料的發展越趨於重要，而相較於微影製程 (Lithography) ，陽極氧化鋁模版 (Anodic Aluminum Oxide, AAO)的製作方式較簡單，且花費較少，近年來許多學者開始利用其做為奈米材料的製備方式並探討其應用。本研究主要分為三個部分：(1) 以不同的操作電壓成長氧化鋁模板，並分別討論其表面形貌，孔洞大小及分布，及其成長條件。(2) 利用不同尺寸之陽極氧化鋁模板，製作出銀之奈米陣列，並討論其分布與模板之關係。(3) 製備銀奈米粒子於微晶矽薄膜上，討論銀奈米陣列對於其吸收之影響。首先，我們先探討以40 V 與 195 V下所成長出陽極氧化鋁的孔洞尺寸及分布情況。在40 V的成長條件下，藉由擴孔時間，可控制孔洞大小由38 nm 至 90 nm，而195 V 可由155 nm 擴大至480 nm；而在成長第二階段模板時，我們將其成長時之電流維持約1mA / cm2，由其厚度與時間之關係判斷，此兩種模板的成長速率相差並不大；而我們以較短的製程時間，成長陽極氧化鋁模板並製作不同尺寸之銀奈米陣列，分別計算出其分佈情形，而整體顆粒大小與模板之孔徑接近。值得一提的是，藉由此奈米銀陣列，其表面電漿共振效應，可有效的提升微晶矽薄膜之吸收，並由光電流的量測證明此吸收提升之效果大多來自於微晶矽薄膜，而提升的效果可達2 ~ 2.5倍。Nanomaterials have drawn much attention in many fields of study and applications. Recently, researchers used anodic aluminum oxide (AAO) membranes to fabricate the nanomaterials, because it is a simple, tunable and low-cost approach. In this study, we focused into three part：(1) The AAO membranes were prepared by applying different voltage and discussed their pore size, distribution and growth steps condition, (2) The Ag nanoparticle arrays were fabricated using different membranes, (3) The Ag nanoparticle arrays were also fabricated on microcrystalline silicon and their optical response of surface plasmon resonance (SPR) in silicon was then investigated. The pore size of AAO membranes have a large difference about 350 nm by applying 40 V and 195 V. It was observed that using 40 V, the pore size of AAO can be adjusted between 38 to 90 nm. On the other hand, the pore size changed from 155 to 480 nm for the high voltage of 195 V. In second andization, the membrane thickness can be controlled by anodization time which the growth rate is similar between applying 40 V and 195 V. The Ag nanoparticle arrays which were fabricated by electron evaporator through AAO membranes showed identical distribution with pore size AAO membranes. It is worth mentioned that the absorption and photocurrent of crystalline silicon could be enhanced up to 2.5 times by the SPR phenomenon of Ag nanopaticle arrays.
