灰化製程對鉻及氧化銦錫接觸阻抗之影響;Ashing process of chromium and indium-tin oxide contact impedance

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Title:	灰化製程對鉻及氧化銦錫接觸阻抗之影響;Ashing process of chromium and indium-tin oxide contact impedance
Authors:	戴謙邦;Pang,Chien
Contributors:	機械工程研究所碩士在職專班
Keywords:	接觸阻抗;灰化製程;乾蝕刻;ashing process;the contact resistance;Dry etching
Date:	2012-08-05
Issue Date:	2012-09-11 18:17:13 (UTC+8)
Publisher:	國立中央大學
Abstract:	本論文是在研究薄膜電晶體液晶顯示器中乾蝕刻製程產生之合成物，會造成鉻與氧化銦錫接觸阻抗異常。依六標準差管理手法為基礎，透過系統化的改善流程將鉻與氧化銦錫接觸阻抗異常的根因找出，於乾蝕刻製程後加入灰化製程以去除合成物達到降低鉻與氧化銦錫接觸阻抗的目標。主要以乾蝕刻設備，利用氧氣氣體電漿經由調整氧氣氣體流量、真空系統之壓力、真空系統射頻產生器之功率、製程時間等 4 個因子與鉻與氧化銦錫接觸阻抗之影響，經由田口實驗找出氧氣氣體流量、真空系統之壓力、真空系統射頻產生器之功率、製程時間等 4 個因子之最佳化，有效降低鉻與氧化銦錫接觸阻抗 15 %。This paper is to study Thin Film Transistor - Liquid Crystal Display, dryetching process to produce the compounds, chromium and indium tinoxide contact resistance can cause abnormal. Depending on the SixSigma management practices based on chromium and indium tin oxidecontact impedance exception of the root due to find out throughsystematic improvement process, dry etching process by adding ashingprocess to remove the target compounds to reduce chromium and indiumtin oxide contact resistance. Dry etching equipment, the use of oxygengas plasma pressure through the adjustment of oxygen gas flow, vacuumsystem, vacuum system, RF generator which can generate power , theprocess time 4 factor and chromium and indium-tin oxide contact with theimpedance effect of oxygen gas flow, vacuum system pressure , Taguchiexperiment to find out the vacuum system, RF generator optimization ofthe four factors of the power , the process time . Effectively reduce thecontact resistance of chromium and indium-tin oxide 15%
Appears in Collections:	[Executive Master of Mechanical Engineering] Electronic Thesis & Dissertation

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