利用線性零組件建構絕緣閘雙極性電晶體;Construction of IGBT with linear circuit elements

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/54510

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/54510

Title:	利用線性零組件建構絕緣閘雙極性電晶體;Construction of IGBT with linear circuit elements
Authors:	蕭永茗;Siao,Yong-ming
Contributors:	電機工程研究所
Keywords:	線性零組件;絕緣閘雙極性電晶體;IGBT;linear circuit elements
Date:	2012-07-16
Issue Date:	2012-09-11 18:52:12 (UTC+8)
Publisher:	國立中央大學
Abstract:	本論文中，我們利用基本的線性零組件，來完成非線性元件的模擬，我們使用的基本線性零組件包含電壓源、電容以及電壓控制電流源等。我們更進一步將元件內部參數，置於主程式中，便於使用者辨識及做調整。利用線性電壓控制電流源的線性零組再利用牛頓-拉夫森法將運算得到的操作點電流以及轉導，代入矩陣公式中，經由牛頓-拉夫森法可以求解到，並探討如何用線性電壓控制電流源取代雙載子電晶體及場效電晶體元件，再利用雙載子電晶體及場效應電晶體組成絕緣閘雙極性電晶體，進一步討論絕緣閘雙極性電晶體的電壓電流特性曲線。本論文將討論兩種IGBT，一種是含N通道MOSFET的IGBT，另是含P通道MOSFET的IGBT。In this thesis, we develop the nonlinear circuit simulations based on the linear components. The basic linear components include voltage source, resistor, capacitor, and voltage-control current source (VCCS), etc. In the program, we will use explicit representation structure to display the implicit parameters of the nonlinear elements and linear components in the main program. We use the basic linear VCCS with the current and transconductance at the operational point for Newton-Raphson iteration, and to explore how to replace the BJT and MOSFET with the linear voltage controlled current source. Further, we will use the BJT and MOSFET to construct the IGBT, and discuss IGBT’s I-V characteristics. Two IGBTs will be discussed. One is the IGBT with n-channel MOSFET, and the other is the IGBT with p-channel MOSFET.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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