應用田口方法導入低溫超薄ITO透明導電膜於電容式觸控面板之研究;None

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題名:	應用田口方法導入低溫超薄ITO透明導電膜於電容式觸控面板之研究;None
作者:	袁廖杰;Yuan,Liao-Chieh
貢獻者:	工業管理研究所碩士在職專班
關鍵詞:	觸控面板;田口方法;低溫成膜;銦錫氧化物透明導電薄膜;Taguchi method;Touch panel;ITO;low temperature deposition
日期:	2012-06-16
上傳時間:	2012-09-11 18:59:56 (UTC+8)
出版者:	國立中央大學
摘要:	觸控面板製程中皆需要有透明導電膜層來產生觸控動作的電場感應，爲了獲得較佳的特性，使其成為超薄及低阻値的ITO導電薄膜。目前產業界大都使用高溫製程機台來進行相關生產，但本論文使用枚葉式直流濺鍍機在玻璃基板表面進行低溫沉積ITO透明導電膜，並應用田口方法來規劃實驗並藉由S/N比來探討影響ITO阻値的要因並研究其最佳化操作條件。本研究中運用特性要因圖進行實驗要因探討後，並透過評價表方式進行篩選找出可能的原因，作為田口方法的控制因子，並使用Minitab軟體進行因子水準排列組合後找出影響ITO阻値的重要因子，並進一步探討其關係性。從最佳組合解的條件進行氣體流量及成膜真空度參數驗證實驗，另外搭配不同的熱處理溫度進行實驗確認後，可得知真空度越低對於薄膜阻値影響最大且氬氣的流量在真空度較高時會造成阻值明顯偏高的現象另外在熱處理製程中使用低含氧濃度的參數亦可讓阻値大幅降低。最後，我們再透過調整濺鍍功率來改善ITO薄膜特性，以符合觸控面板的透明導電膜，須達到膜厚200A及阻値低於150Ω/□的規格之要求。In touch panel manufacturing process, transparentconductive thin film is one of key components to generate electric field configuration by touch movement. To obtain better characteristics of ITO (indium tin oxide) conductive film, which is ultra thin and with low resistance value, it is mostly manufactured in in-line high temperature process. However, in this thesis, DC cluster sputtering is used to conduct low temperature deposition of ITO transparent conductive film. Meanwhile, Taguchi method is applied to conduct experiments and with S/N (Signal to Noise) ratio to further probe into the cause and effect, which is influenced ITO resistance value, and study the optimized operating conditions.In this study, fish-bone diagram is used to find out cause and effect, through evaluation process to identify potential factors as control factors in Taguchi method. Furthermore, Minitab software is applied to conduct factor level combinations looking for important factors to ITO resistance value and investigate its relations. The best result of conditions combination will perform in the gas flow and vacuum parameters verification experiments. Moreover, through different heat treatment temperature on the experiments to confirm and learned that the lower the degree of vacuum is the larger influence to film resistance value is, and the higher amount of argon flow in a vacuum will result in higher resistance value significantly. In addition, the resistance value can be greatly reduced with the use of low oxygen concentration in heat treatment process. Finally, it is to improve ITO thin film properties by adjusting sputtering power to meet touch panel requirements of transparent conductive film, which is needed to correspond to film thickness 200A, resistance value less than 150Ω/□.
顯示於類別:	[工業管理研究所碩士在職專班 ] 博碩士論文

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