In recent years, SOI technology has more advantages than traditional bulk Si processing for the application of ULSI . Smart-Cut? Process technology which developed by Bruel and his co-workers arousing a lot of attention because it can fabricate high quality SOI structures. A lot of research works about the Smart-Cut? also continue discussing. We discover that the Poly-Silicon Cover Layer combined with silicon oxide layer can effective stop the out diffusion of the hydrogen ions. In this study, we use the layer of poly-silicon combine to discuss the influence of the condition of time and temperature that the hydrogen ions start to blister. By experimental result we can find that the combined cover layer indeed let the bubble start to blister at a lower temperature and shorter time. We also find that we can improve the blistering of hydrogen bubble with the only 30 nm thickness poly-si cover layer. We hope that this discovery could be applied in the future.
