摻雜氫化奈米晶矽薄膜製備及其應用於矽基太陽能電池; Fabrication of Hydrogenated Nanocrystalline Silicon Doped Layer and It Applocation for HIT Solar Cells

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題名:	摻雜氫化奈米晶矽薄膜製備及其應用於矽基太陽能電池;Fabrication of Hydrogenated Nanocrystalline Silicon Doped Layer and It Applocation for HIT Solar Cells
作者:	畢家榮;Bi,Jia-rong
貢獻者:	材料科學與工程研究所
關鍵詞:	奈米晶矽;太陽能電池;電子迴旋共振化學氣相沉積;Hydrogenated Nanocrystalline Silicon;Solar Cells;ECRCVD
日期:	2013-07-22
上傳時間:	2013-08-22 11:44:11 (UTC+8)
出版者:	國立中央大學
摘要:	a-Si:H/c-Si 異質接面(Heterojunction with Intrinsic Thin Layer, HIT)太陽電池是目前太陽能電池領域中最熱門的研究之一，主要是因為異質接面太陽電池穩定性與高效率，並且強調在低溫(< 200 °C)製程，低溫製程優點：(1)能夠使用較薄矽晶片(<100 μm)來降低成本，因為薄晶片的電池製作，高溫會使晶片產生彎曲。(2)低溫製程不會造成氫鍵斷掉而鈍化效果變差。(3)低溫製程減少能源成本。但是a-Si:H 層的加入會造成短波長光吸收，視為其短路電流較傳統太陽能電池低的原因之一。本論文主要以電子迴旋共振化學氣相沉積系統(Electron Cyclotron Resonance Chemical Vapor Deposition, ECR-CVD)製備高能隙之硼摻雜奈米晶矽(Nano-crystalline silicon, nc-Si: H)薄膜以及p-nc-Si:H/i-a-SiC:H/n-c-Si/i-a-SiC:H/ n+-nc-Si:H結構之異質接面太陽電池。增寬能隙減少窗口層對光吸收和改善摻雜層電性是本篇主要研究薄膜的方向，奈米晶矽薄膜具有的優點：(1)寬能隙能夠減少對光吸收，以增加太陽能電池的吸光率，以獲得較高短路電流，而且寬能隙還能夠增加內建電場，提高太陽電池之開路電壓。(2)奈米晶矽薄膜相較於氫化非晶矽薄膜具有更好電穩定性及低的電阻率，較能夠抵抗光照衰退和較穩定的太陽能電池之填滿因子。(3)奈米晶矽薄膜相較於微晶矽薄膜，具有好的界面匹配，能夠減少表面複合電流產生，提高開路電壓。本篇使用ECR-CVD來製備及研究摻雜奈米晶矽薄膜和異質接面太陽能電池。ECR-CVD具有：(1)高密度電漿源導致高氣體解離率，降低氣體製程成本以及增加製程速率。(2) 低的電子溫度及低離子轟擊。(3) 無電極汙染。等優點。因此以ECR-CVD來製備摻雜奈米晶矽薄膜，可以降低對薄膜的結構缺陷和表面損害。在本篇論文中我們在玻璃基板上以較低的氫稀釋比成長硼摻雜奈米晶矽薄膜。其結晶率為50.6 %、晶粒大小為5.3 nm、光學能隙為2.1 eV、以及高電導率5.9×101 ohm-1cm-1(載子濃度為2.7×1020 cm-3、載子遷移率為1.49 cm2/Vs)。除了成功製備高導電率、寬能隙之硼摻雜奈米晶矽薄膜外，我們也將其應用於矽晶異質接面太陽能電池，在p-nc-Si:H/i-a-SiC:H/n-c-Si/i-a-SiC:H/n+-nc-Si:H平面結構，轉換效率可達12.7 % (開路電壓Voc = 594 mV，短路電流 Jsc =29.8 mA/cm2，填充因子FF = 71.7%)。 Heterojunction with intrinsic thin layer (HIT) solar cell is currently one of the most popular researches in photovoltaic. The low temperature growth (< 200 °C) of high efficiency of the HIT solar cells has many advantages: (1) the using of thin silicon wafers (<100 μm) can reduce costs. (2) Low temperature process cannot reduce the passivation quality. (3) Low temperature process can reduce energy costs. However, the adding of a-Si:H will cause the short wavelength light to reduce the lower short circuit current density than the conventional silicon solar cells. In this thesis, we use the Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) to fabricate the boron-doped hydrogenated nanocrystalline silicon thin films (p-nc-Si:H) and use it to be the window layer and back surface field layer of HIT solar cells. The wider bandgap of nc-Si:H can not only result the highly transparent to enhance the absorption of absorber, but also enhance the build-in electrical field to increase the open circuit voltage. Comparing with the a-Si:H, the nc-Si:H is more stable and highly conductivity. Furthermore, the nc-Si:H can prevent the mismatch of interface which can reduce the recombination effect to enhance the open circuit voltage in the solar cells. The high plasma density and low ion bombardment of ECR-CVD is suitable to growth the silicon-based thin films. In this study, we used the ECR-CVD to deposit the boron-doped nc-Si:H thin films on glass substrates and investigate the effect of hydrogen dilution ratio, flow rate of B2H6, working pressure, and annealing process on the film qualities. The high crystallinity (50.6 %), optical bandgap (2.1 eV), and highly conductivity (9×101 ohm-1cm-1) can be obtained. Moreover, we apply the nc-Si:H thin films to fabricate the HIT solar cells (p-nc-Si:H/i-a-SiC:H/n-c-Si/i-a-SiC:H/n+-nc-Si:H). The 12.7 % (Voc = 594 mV, Jsc =29.8 mA/cm2, FF =71.7%) of conversion efficiency can be achieved with active area (0.73 cm2)and planar sturctuer.
顯示於類別:	[材料科學與工程研究所 ] 博碩士論文

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