本篇論文中，在探討與開發改良式矩形網格並且應用於環繞式閘極MOSFET模擬相關特性。為了探討其元件特性，我們運用基礎半導體理論波松方程式、電子連續方程式與電洞連續方程式，建構出矩形網格進行模擬。為了改善矩形網格模擬圓弧接面所產生鋸齒狀的非理想情況，而且僅用最簡單的直角座標去解決圓弧接面的問題，我們將矩形網格重新改良成三角形網格，開發出直角座標系下的三角形網格，用三角形網格做模擬，並比較三角形網格模擬出的結果是否有所改善。 This thesis explores and develops an improved rectangular mesh and applies it to the 2D simulation of surrounding gate MOSFET. We use Poisson’s equation, electron continuity equation and hole continuity equation to construct a rectangular mesh for 2D numerical simulation. In order to improve the ill-fitting rectangular mesh at the circular PN junction for 2D simulation, we separate each rectangular mesh into two triangular meshes. The improved rectangular mesh will be used to simulate the 2D surrounding gate MOSFET, and the new simulation result will be compared with the result from the original rectangular mesh.
