銻化銦鎵合金材料具備了化合物半導體塊材中最高的電洞遷移率，搭配上銻化物系列磊晶也同樣具備了極高電子遷移率的特性，使該磊晶系統可以形成類似CMOS的架構，特別適合應用在數位電路的領域上。本論文所使用的磊晶架構是由兩個較寬能隙的材料銻化鋁夾擠一較窄能隙的材料銻化銦鎵，形成第一型態的能帶結構，也就是量子井結構。在此結構中，主要載子電洞可以良好的被侷限在量子井內，形成一個高載子濃度與低片電阻的磊晶層，元件就可以利用該磊晶層而獲得大電流的結果。 本論文研究的銻化物磊晶主要設計包括上阻擋層的鈹摻雜，使通道的載子濃度提升，獲得大的操作電流。其次是調整底部緩衝層的厚度，使元件在截止狀態時可以壓低來自於底部的漏電流。最後把磊晶結構成長於矽基板之上，完成元件製作。在矽基板的磊晶元件製作上，利用離子佈植的方式成功製作出全平面型的元件，對於元件微縮的實現與長時間的操作上有很大的幫助。而元件的方面是製作T形閘極的元件，閘極線寬為0.25 μm，源極與汲極間距為2 μm，汲極飽和電流在汲極電壓為-3 V時為81.5 mA/mm，轉導值為75.0 mS/mm。元件在製作完成三個月後汲極飽和電流在相同偏壓下還具有90%的特性。 The fabrication and characterization of AlSb/In0.4Ga0.6Sb/AlSb quantum well HEMTs are reported. These structures have an Al0.7Ga0.3Sb/AlSb composite buffer layer under the In0.4Ga0.6Sb channel, a Be doped AlSb top barrier layer, and In0.5Al0.5As/InAs composite cap layer. The epitaxial layer on GaAs substrate exhibited a maximum hole mobility 1080 cm2/V-s, channel hole density 1.76 × 1012 /cm2, and minimal channel sheet resistance 3276 Ω/□. The epitaxial structure on Si substrate exhibited a maximum hole mobility 800 cm2/V-s, channel hole density 1.00 × 1012 /cm2, and minimal channel sheet resistance 7815 Ω/□. The 2 μm Metal-Insulator-Semiconductor High-Electron-Mobility Transistors (MIS-HEMTs) on GaAs exhibited a maximum drain current of 55.1 mA/mm, a peak transconductance of 41.8 mS/mm. Moreover, fabrication and characterization of planar HEMTs with ion-implanted isolation were discuessed. The planar 0.25 μm HEMT exhibited a maximum drain current of 85.1 mA/mm, a peak transconductance of 75.0 mS/mm. The stability against AlSb oxidation during isolation process can be achieved by the ion-implantation isolation technique implemented in plannar AlSb/In0.4Ga0.6Sb/AlSb HEMTs. The planar HEMT remained 90% drain current after three month storage in air.
