我們證實了近彈道單載子光二極體在次兆赫波的頻率範圍內把磊晶結構比例縮小是為高功率特性.比較UTC-PDs，NBUTC-PD提供一個比較高且最高限度的偏壓在近彈道電子傳輸，它改善輸出功率的特性。此外，一個小負載電阻(<50Ω)，這會犧牲輸出功率在最小化的輸出AC電壓擺幅在DC偏壓點時，這是沒必要的。按比例縮小NBUTC-PDs的收集層厚度及主動區面積，我們實現了一個大的光電響應頻寬(250GHz)和高飽和電流(17mA)，這是接近理論上的最大值在負載50Ω且-2V的偏壓下。 We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (< 50Ω), which would sacrifice the output power for minimizing the output AC voltage swing on DC bias point, is not necessary. By scaling down the collector layer thickness and active area of the NBUTC-PDs, we achieve a large optical-to-electrical bandwidth (250 GHz) and a high saturation current (17 mA), which is close to the theoretical maximum, under a 50Ωload and -2V bias.
