English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 78818/78818 (100%)
造訪人次 : 34721834      線上人數 : 1943
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/61861


    題名: 注入鎖定除頻器之研究及其鎖相迴路應用;Research on Injection-Locked Frequency Divider and Its Phase-Locked Loop Application
    作者: 林宗憲;Lin,Tsung-Hsien
    貢獻者: 電機工程學系
    關鍵詞: 鎖相迴路;注入鎖定;頻率除頻器;除六;振盪器;Phase-locked loop;injection-locked;frequency divider;divide-by-6;oscillator
    日期: 2013-12-23
    上傳時間: 2014-02-13 17:53:01 (UTC+8)
    出版者: 國立中央大學
    摘要: 本論文主要針對應用於微波與毫米波鎖相迴路之注入鎖定技術。第二章與第三章分別闡述應用於鎖相迴路中的注入鎖定除頻器及其鎖相迴路應用。第四章為注入鎖定振盪器的電路設計與量測結果。
    第二章介紹各類除頻器架構以及設計原理,並且提出注入鎖定除六與除五除頻器對鎖定頻寬的理論模型,從理論模型分析得知,鎖定頻寬跟注入器(injector)的元件與注入訊號大小成正比。同時採用台積電提供的90 nm低功耗互補式金氧半場效電晶體製程(TSMC 90 nm LP CMOS)實現注入鎖定除六除頻器,量測最大鎖定頻寬為2.9 GHz。第三章是將第二章所提出之除六除頻器整合至鎖相迴路系統,並且討論外在環境對量測電路的影響,提出實質的解決方案。同樣是使用台積電提供的90 nm製程實現,鎖相迴路的鎖定頻寬為25.3~27.3GHz,輸出功率接大於-8 dBm。在鎖定頻率為25.38 GHz,在距離中心頻10 kHz、100 kHz與1 MHz下,分別為-86.4、-90.7與-91.69 dBc/Hz。電路直流總功耗為40 mW,達到低直流功耗的效果。
    第四章提出一個使用基級注入鎖定振盪器。藉由調整閘極端的電壓與基級注入鎖定技術,改善輸出相位雜訊與鎖定頻寬。使用台積電提供的90 nm製程實現,在振盪頻率為50 GHz、60 GHz與70 GHz下,有最寬的鎖定頻寬百分比分別為7.8%、13.8%與14.7%,總直流功耗為31.2~44.4mW。
    This thesis focuses on the injection-locked technique for the microwave and millimeter-wave phase-locked loop (PLL). A Ka-band injection-locked frequency divider (ILFD) and its PLL application are presented in Chapter 2 and 3, respectively. Finally, The design and analysis results of a V-band injection-locked oscillator (ILO) are proposed in Chapter 4.
    Several frequency dividers and the injection-locked theory are introduced in Chapter 2. The locking range of divide-by-6 and divide-by-5 ILFDs is investigated to obtain the design methodology. From the analysis, the locking range of ILFDs is proportional to the device size of the injectiors and the amplitude of the injection signal. The proposed divide-by-6 ILFD is fabricated using TSMC 90 nm low power (LP) CMOS process and it features with a locking range of 2.9 GHz. Moreover, the proposed divide-by-6 ILFD is applied to a fully integrated Ka-band PLL. Several DC bypass networks for the measurement is discussed to further reduce the baseband /DC noise, and the effective solution is also addressed. The measured output phase is -86.4, -90.7, and -91.69 dBc/Hz at 10 kHz, 100 kHz, and 1 MHz offset at 25.38 GHz. The total DC consumption of PLL is about 40 mW.
    The proposed injection-locked oscillator using TSMC 90 nm LP CMOS process is presented in Chapter 4. With the body-injection technique, wider locking range can be achieved. As the oscillation frequency are 50, 60, and 70 GHz, the widest locking ranges percentage at 7.8%, 13.8% and 14.7%, respectively. The total DC power consumption is about 31.2~44.4 mW.
    顯示於類別:[電機工程研究所] 博碩士論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML735檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明