研究期間：10111~10210;In this project, SiNx:H/SiOxNy:H multilayer films will be developed using electron cyclotron resonance chemical vapor deposition system as anti-reflection (AR) coating for increasing the photoelectric conversion efficiency of crystalline silicon solar cells. At the first stage of this project, we will run the simulation of SiNx:H/SiOxNy:H multilayer structure with the collaborator in order to obtain the optimized thickness and optical parameters of each layer, which could be used as references for tuning the growth recipes of the anti-reflection layers. In the development of SiNx:H/SiOxNy:H multilayer growth technology, we expect that the reflectance of textured silicon wafers with the developed AR coating could be lowered down to less than 2.5%. By controlling the deposition parameters, the SiNx:H and SiOxNy:H films with low Si content could be achieved, and in doing so the absorption of the films is decreased. The ultimate goal of this project is to assist our collaborator (Taiwan Solar Energy technology Co., Ltd.) to integrate the SiNx:H/SiOxNy:H multilayer deposition technology into the production line of the conventional cell process, and increase the cell efficiency by above 0.2%.
