研究期間：10108~10207;The InGaAs quantum dots, Ge quantum dots and the ZnSe1-xOx alloy films are materials which are important for photonic device applications. In this project, we propose to study the photon emission properties of these materials. For the InGaAs quantum dot system, we focus on the laser properties of quantum dots embedded in q-L2 photonic crystal nanocavity; and the development of the AFM oxidization technique on the photonic crystal nanocavity. For the Ge quantum dot, the enhancement of quantum dot direct emission will be investigated. In the ZnSe1-xOx alloy films, we will study the mechanism of energy band gap reduction. Spectral characteristics of these materials will be performed using the micro-photoluminescence and time-resolved photoluminescence, HBT interferometer, Michelson interferometer, and the photoreflectance. Experimental results will be compared with the theories.
