研究期間：10108~10207;This project proposes to study the device operation of the junctionless MOSFET. The n-p-n structure is necessary from source to drain in the traditional n-channel MOSFET. There are two junctions from source to drain. However, the n-p-n structure is replaced by n-n-n structure from source to drain in the junctionless n-channel MOSFET. The junctionless MOSFET is capable of showing a good I-V characteristic. We will refer to reference papers to compare the traditional MOSFET and the junctionless MOSFET. Especially, there may be two types of current together in the junctionless MOSFET. One is the bulk current, the other is the accumulation current at the SiO2-Si interface. (I = I_bulk + I_accumulation), This project will help the researchers learn more device physics, and help our industry significantly.