研究期間：10108~10207;This project proposes the research and development of the high-performance microwave and high-speed mixed-mode circuits using the GaAs BiFET and antimonide based compound semiconductor (ABCS) technologies. The BiFET technology consists of HBT and HEMT transistors; while the ABCS technology consists of N- and P-channel Quantum-Well FET transistors. The complementary topology can be adopted for the circuit design using the ABCS technology, and the developed technologies will be further applied to the low-power high-speed analog mixed-mode circuits. The ABCS technology has great potential for the next generation transistor due to its superior performance. The receiver front-end, local oscillator and high-speed digital modulation/demodulation circuits for a high-performance phase array system will be developed in this research project. The features of the adopted processes are high performance, low voltage and low power. Also, the developed technologies can be further applied to the green electronics. In this research project, a few innovative circuit topologies will also be proposed to apply to the circuit development using the GaAs and ABCS BiFET processes. The project will be carried out following the below procedures, 1) design and simulate the phase array system, 2) establish the design goals of sub-circuit systems, 3) survey the related integrated circuit foundries and the device modeling, 4) establish the passive components, 5) implement and fabricate the single-circuit chips, 6) measure and verify the chips or the hybrid circuits, 7) integrate the sub-circuit into a module, and 8) investigate the experimental results. In this 3-year project, the establishment of the circuit development using the GaAs and ABCS BiFET technologies, the innovative MMIC designs, the related technologies of the microwave measurement and the K-band phase array will be achieved. The project participants will be also trained to gain the phase array system and the related experiences.