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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/64575

    Title: 晶矽覆蓋層對矽中佈植氫離子擴散的抑制效應;Suppression Effect of Si/SiO2 Bilayer on Out-diffusion of Hydrogen Ions Implanted in Silicon
    Authors: 黃冠中;Huang,Kuan-Chung
    Contributors: 機械工程學系
    Keywords: 晶矽覆蓋層;氫離子擴散;Si/SiO2 Bilayer;Out-diffusion of Hydrogen Ions
    Date: 2014-06-16
    Issue Date: 2014-08-11 18:43:40 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 現今超大型積體電路的應用方面,SOI 基板比起許多傳統矽基板有著許多
    更好的優點,用Smart-Cut®的技術可製造出高品質SOI 結構,然而在
    Smart-Cut 的製程中氫離子的分布對薄膜轉移之品質有極大影響,矽中氫離
    本實驗利用移除30nm 多晶矽層與100nm 氧化層的試片觀察雙層結構的有
    無對氫離子擴散的抑制情形,透過SIMS 檢測觀察試片在移除後四個月後的
    氫離子濃度變化,由檢測結果觀察到30nm 多晶矽層對於氫離子擴散抑制效
    轉移的時間。;Application of modern VLSI circuits, SOI substrate has many
    advantages compared to many conventional silicon substrate.Smart-Cut
    ® technology can produce high-quality SOI structure.However,the
    distribution of hydrogen ions implanted in Smart-Cut process has a great
    impact on the quality of the film transfer, the concentration of hydrogen
    ions in silicon must be higher than the minimum concentration of
    lobes.Therefore,how to effective preserve the implanted hydrogen ions in
    the silicon wafer is one of the keys to success film transfer.
    The experiment remove 30nm poly-silicon layer and 100nm oxide layer,
    and observe the effect of double layers structure suppress the hydrogen
    ion diffusion in silicon.The hydrogen ion concentration changes detected
    by SIMS to observe the test piece after four months removed, the test
    results observed that 30nm poly-silicon layer can effective suppress the
    hydrogen ion diffusion.Poly-silicon and silicon oxide layer structure is
    more effective in blocking implantation outward diffusion of hydrogen ions
    in the silicon wafer, the concentration of hydrogen ions in silicon drops
    slow, the test strip can extend the time of the transfer film.
    Appears in Collections:[機械工程研究所] 博碩士論文

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