現今超大型積體電路的應用方面，SOI 基板比起許多傳統矽基板有著許多 更好的優點，用Smart-Cut®的技術可製造出高品質SOI 結構，然而在 Smart-Cut 的製程中氫離子的分布對薄膜轉移之品質有極大影響，矽中氫離 子的濃度必須大於最低可裂片濃度方能進行轉移，因此如何使矽晶圓中所 佈植的氫離子有效的保存在矽晶圓中為薄膜轉移成功與否的關鍵之一。 本實驗利用移除30nm 多晶矽層與100nm 氧化層的試片觀察雙層結構的有 無對氫離子擴散的抑制情形，透過SIMS 檢測觀察試片在移除後四個月後的 氫離子濃度變化，由檢測結果觀察到30nm 多晶矽層對於氫離子擴散抑制效 果明顯，若使用多晶矽與二氧化矽層結構更可以有效阻擋佈植在矽晶圓中 的氫離子向外擴散，使矽中氫離子的濃度下降變慢，延長試片可進行薄膜 轉移的時間。;Application of modern VLSI circuits, SOI substrate has many advantages compared to many conventional silicon substrate.Smart-Cut ® technology can produce high-quality SOI structure.However,the distribution of hydrogen ions implanted in Smart-Cut process has a great impact on the quality of the film transfer, the concentration of hydrogen ions in silicon must be higher than the minimum concentration of lobes.Therefore,how to effective preserve the implanted hydrogen ions in the silicon wafer is one of the keys to success film transfer. The experiment remove 30nm poly-silicon layer and 100nm oxide layer, and observe the effect of double layers structure suppress the hydrogen ion diffusion in silicon.The hydrogen ion concentration changes detected by SIMS to observe the test piece after four months removed, the test results observed that 30nm poly-silicon layer can effective suppress the hydrogen ion diffusion.Poly-silicon and silicon oxide layer structure is more effective in blocking implantation outward diffusion of hydrogen ions in the silicon wafer, the concentration of hydrogen ions in silicon drops slow, the test strip can extend the time of the transfer film.
