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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/65687

    Title: 利用矩形及直角三角形模組來探討二維半導體元件模擬分析;2D Semiconductor Device Simulation with Right Rectangle and Triangle Elements
    Authors: 吳居峰;Wu,Gen-feng
    Contributors: 電機工程學系
    Keywords: 矩形;直角三角形模組;二維半導體元件;Semiconductor;Right Rectangle;Triangle;2D;Simulation
    Date: 2014-07-01
    Issue Date: 2014-10-15 17:08:16 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 一般二維半導體元件模擬,為規則性排列的矩形方格所組成,例如20x20的方格,但矩形方格在圓弧接面上的精確度,往往有很大的受限。本論文中,我們改變原本規則性的排列組合網格模組,發展出不規則的矩形方塊排列,進一步開發出四個直角三角形的模組,我們運用這五種模組來滿足任意形狀的二維半導體元件模擬。此外為了證明網格的正確性,我們利用矩形網格與直角三角形網格來模擬電阻與PN二極體,並且與規則性排列網格做比較,驗證其結果會發現與規則性網格模擬完全相符。最後我們使用網格應用在MOS-Capacitor,然後在將模擬值與一般理論公式的臨限電壓做比較。;A general two-dimensional simulation of semiconductor device is regularly arranged in rectangle meshes, such as the 20x20 rectangle meshes. However, the accuracy is limited when rectangle meshes are applied to the circular junction. In this thesis, we develop the four quadrants of right-angled triangle meshes to alter the grid into irregular arrangement. By these five types of mesh, we can fit any shapes of semiconductor device in the two-dimensional simulation. Furthermore, in order to verify the accuracy of this module, we use rectangle meshes and right-angled triangle meshes to simulate the resistors and PN diodes,, and it perfectly matches with the simulation result of regular grid arrangement. Finally, we apply this module to MOS-Capacitor simulation, and compare the simulation result with the theoretical result of threshold voltage.
    Appears in Collections:[電機工程研究所] 博碩士論文

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