本篇論文將利用Ｃ＋＋的程式進行二維雙閘極無接面金氧半場效電晶體的模擬，模擬出其電壓與電流特性曲線與汲極電流。一開始，此論文將先在閘極電流與電壓的圖中討論臨界電壓與通道厚度與通道參雜濃度的關係，再藉由討論得結果決定最適合的臨界電壓。再決定臨界電壓後，需要模擬不同閘極電壓下的汲極電流以及汲極電流的開關比例，此模擬可以證實元件是否可以正常的運作以及模擬程式的正確性。在證實元件的正確性後，此論文將會模擬不同閘極電壓下的電壓電流特性曲線，並且將電流以數學公式的方式導出，進而驗證模擬與理論的值是否相同。此篇論文除了討論元件的基本電性，另外一個重點放在臨界電壓與溫度的關係上。此論文將會使用Ｃ＋＋程式進行溫度的改變使其進而影響元件的基本電性。再模擬出臨界電壓與溫度的關係後，此論文將會參考文獻所實驗出的數值進行比較，比較是否有相同的特性，以確認其模擬是否正確。最後，此論文將會進行反向器的電路應用，將元件與電阻進行串連使其成一個反向器。並且量測出其參數進行確認電路的品質與特性。;This thesis uses the C++ to develop an adapted band matrix solver to simulate the I-V curve and the drain current of the 2-D double-gate n-channel MOSFET. And it discusses the threshold voltage from the I-Vg curve and selects the appropriate doping concentration and channel thickness to complete the following experiments. The I-Vg curve will be simulated to determine threshold voltage. The I-V curve can calculate drain current in different gate voltage. The results can be compared with the other reference papers. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Poisson’s equation. The equations of the threshold voltage can be developed, and the threshold voltage of double-gate n-channel MOSFET can be calculated. Afterword, this paper will simulate and discuss the correction between threshold voltage and temperature. This paper will include the thermal voltage and intrinsic doping concentration of temperature in the C++ program. After simulating, the value of simulation will be compared with the value of the reference paper to confirm the trend of threshold voltage. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100 kΩ resistor will be used to simulate the Vo-Vi characteristics and analyzes the parameters of the inverter, and the noise margin will be calculated in order to determine the inverter’s performance and quality.
