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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/67604


    Title: 二維異質接面半導體元件之開發與模擬;Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
    Authors: 蕭秉昇;Hsiao,Ping-Sheng
    Contributors: 電機工程學系
    Keywords: 異質接面;網格電路模擬;半導體;heterojunction;Semiconductor;Simulation
    Date: 2015-06-30
    Issue Date: 2015-07-30 23:24:22 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 在本文中,我們開發的真空能階系統,E_0方法,去解決模擬2-D異質結構的半導體元件邊界條件上的問題。在過去,我們的程式是使用本質費米能階,E_fi,以其來計算載子濃度與電位電場情形。然而,E_fi這個方法在2D異質接面上有模擬的問題。所以發展了E_0系統去計算邊界條件並解決問題。而在之後的章節,我們去驗證E_0方法製作出的模型是否可行,藉由pN接面元件與理論討論。並探討陡變接面與漸變接面在模擬上的問題。最後,我們使用的方法E_0,做出HBT並模擬,且著重在能隙寬度對於電壓電流特性的比較。;In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics.
    Appears in Collections:[電機工程研究所] 博碩士論文

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