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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/67615


    Title: 區塊劃分的缺失 於二維半導體元件模擬之探討;Area-Partition Problems in 2-D Semiconductor Device Simulation
    Authors: 黃敏綺;Huang,Min-Chi
    Contributors: 電機工程學系
    Keywords: 二維半導體模擬;直角三角形網格模組;2-D Semiconductor Device Simulation;Right Rectangle grid model
    Date: 2015-06-30
    Issue Date: 2015-07-30 23:45:48 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 在模擬特殊結構元件時,以微積分觀念,我們通常會將其不規則或圓弧設計處切割更細更密,使數值網格能更貼近且佈滿整塊模擬區域,並延伸節點掃描概念,發展出以區域掃描的方式完成等效電路的模擬,然而我們發現切割加密後,多出的節點會對於模擬結果造成極大誤差,因此於此論文中,我們深入探討誤差發生原因,開發出以三塊直角三角形網格做為漸變層以修正誤差,再以簡單電阻驗證無誤後,應用於不均勻電場中電流深度量測與pn二極體,並與規則分割方式比較精準度與模擬效率。;For simulation of semiconductor device with special structure , we usually partition irregular region into smaller pieces to make an appropriate grid to provide a reasonable approximation of geometry. However, additional node caused by incorrect area-partition will result in unpredictable errors. In this thesis, we develop a transition layer with three right-angled triangle meshes. For verification , a simple resistor will be simulated and compared to the theoretical value. Finally, we apply this transition layer to simulate the current density profile in different depths for a resistor , and to simulate PN junction characteristics.
    Appears in Collections:[電機工程研究所] 博碩士論文

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