在模擬特殊結構元件時，以微積分觀念，我們通常會將其不規則或圓弧設計處切割更細更密，使數值網格能更貼近且佈滿整塊模擬區域，並延伸節點掃描概念，發展出以區域掃描的方式完成等效電路的模擬，然而我們發現切割加密後，多出的節點會對於模擬結果造成極大誤差，因此於此論文中，我們深入探討誤差發生原因，開發出以三塊直角三角形網格做為漸變層以修正誤差，再以簡單電阻驗證無誤後，應用於不均勻電場中電流深度量測與pn二極體，並與規則分割方式比較精準度與模擬效率。;For simulation of semiconductor device with special structure , we usually partition irregular region into smaller pieces to make an appropriate grid to provide a reasonable approximation of geometry. However, additional node caused by incorrect area-partition will result in unpredictable errors. In this thesis, we develop a transition layer with three right-angled triangle meshes. For verification , a simple resistor will be simulated and compared to the theoretical value. Finally, we apply this transition layer to simulate the current density profile in different depths for a resistor , and to simulate PN junction characteristics.
