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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/6785

    Title: 奈米矽鍍膜應用於氮化鎵藍光二極體By;coating Si nanoclusters embed in SiO2 with GaN LED
    Authors: 魏志豪;Gui-Hao Wei
    Contributors: 光電科學研究所
    Keywords: 鍍膜;二氧化矽;氮化鎵;藍光二極體;奈米矽;Si nanoclusters;sio2;coating;GaN;LED
    Date: 2004-07-07
    Issue Date: 2009-09-22 10:28:25 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本實驗的設計是利用電子束蒸鍍系統(E gun)成長二氧化矽薄膜(SiO2 film)並經過高溫熱處理後在薄膜內形成奈米矽聚集,研究此奈米矽聚集的光激發光螢光頻譜(Photoluminescence)特性並將此薄膜應用在氮化鎵(GaN)藍光發光二極體上(LED)。This experiment is about coating a SiO2 film with GaN LED. The SiO2 flim have been annealing 1000℃ 20min and 1000℃ 60min。 We can prove that there exits Si nanoclusters in the SiO2 film when after annealing 800℃ 10min。 In the PL analysis,we can find a YL band peak from SiO2 film when after annealing。
    Appears in Collections:[光電科學研究所] 博碩士論文

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