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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/68888

    Title: 應用於波長650-nm及850-nm之標準CMOS製程矽光檢測器
    Authors: 蔡尹佳;Tsai,Yin-Chia
    Contributors: 電機工程學系
    Keywords: 光檢測器;photodiode
    Date: 2015-08-04
    Issue Date: 2015-09-23 14:46:00 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文利用標準CMOS製程實現矽光檢測器,當入射光波長為650-nm時,由於光的吸收深度較接近元件表層的操作區,而基板產生之擴散載子可減少對頻率響應的影響。透過Silvaco公司之二維元件模擬軟體研究,相較於入射光波長為850-nm,又用於波長為650-nm時,可改善擴散載子造成之頻率響應滑落(roll-off)的情形,進而提升3-dB頻寬。同時針對不同的元件結構設計,分別為水平式之累崩光檢測器以及具Deep n-well之光檢測器,分別將其應用於不同入射光波長且操作在累崩區來做比較。最後利用0.25 µm標準CMOS 高壓製程實現多層PN接面之矽光檢測器,並針對不同深度之PN接面作進一步的分析,透過不同波長的光具有不同吸收深度之特性,使得不同深度之PN接面對應不同波長具有特性的差異。另外也利用光脈衝響應之量測,研究不同元件對脈衝的反應,分析長尾巴效應(long tail effect)的影響。;This study presents photodetectors (PDs) implemented in standard CMOS technology. Due to the penetration depth of the 650-nm-wavelength light into Si is close to the depth of the depletion in the surface p-n diodes, which can reduce the frequency response of the PD degraded by the slow diffusion carriers. Silvaco TCAD simulation was used to verify that the diffusion roll-off in PD could be improved by reducing the diffusion component of photo-current at 650-nm wavelength. Furthermore, this study compared different device structures including avalanche photodetectors and photodetectors with deep n-well implantation. Finally, the photodetectors with different p-n junction depth implemented in standard 0.25 µm CMOS high voltage technology are discussed. The different wavelength performance of photodetectors with different p-n junction depth results from the characteristics of the penetration depth of light in silicon is wavelength-dependent. Besides, long tail effect was analyzed by the pulse measurement.
    Appears in Collections:[電機工程研究所] 博碩士論文

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