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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/68933

    Title: 鍺量子點光電晶體暫態載子傳輸特性分析;Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique
    Authors: 陳和謙;Chen,Ho-Chien
    Contributors: 電機工程學系
    Keywords: 光電晶體;鍺量子點;暫態
    Date: 2015-08-17
    Issue Date: 2015-09-23 14:46:54 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 鍺材料具有高載子遷移率及窄能隙等優點,搭配此材料製作的半導體元件,得以實現適用於波長1.55μm之光偵測器或是高速電晶體。
    ;In this thesis, we designed a high-speed pulse system for Ge QD MOS phototransistors and single hole transistors(SHT). With this measurement system, synchronization on voltage pulse input and current signal output measurement can be implemented. Consequently, dynamic current change happened in Ge QD electronic devices is studied in different input conditions such as pulse width and pulse voltage. Furthermore, the carrier dynamic transport mechanism is investigated.
    Ge QD MOS phototransistors driven by high-speed gate voltage pulses would quickly go into transient deep depletion state, which shows an electrical behavior different from the thermal equilibrium states such as overshoot current. The quantity of transient non-equilibrium minor carriers in Ge QD MOS phototransistors have tremendous differences with various illumination power, pulse voltage, temperature and gate oxide thickness. Such transient response is only observable in Ge QD MOS phototransistors but not in MOSFETs without Ge QD and Ge QD single hole transistors.
    Further studies on transient transportation of the Ge QD MOS phototransistors can provide helpful information for improvement and applications in the future.
    Appears in Collections:[電機工程研究所] 博碩士論文

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