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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/69073


    Title: 寬頻雙頻帶通濾波器之微型化設計
    Authors: 王韻茹;Wang,Yun-ru
    Contributors: 電機工程學系
    Keywords: 濾波器;帶通濾波器;寬頻;雙頻
    Date: 2015-08-31
    Issue Date: 2015-09-23 15:13:36 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文以微型化寬頻雙頻帶通濾波器電路為主題,使用集總元件構成橋式T線圈取代傳輸線,同時達到寬頻響應之設計與微型化的效果。而在電路的製作上,則以平衡是電感與平行板電容,於積體被動元件(IPD)製程實現微型化之橋式T線圈之基本組件,進而完成寬頻雙頻帶通濾波器之設計。
    在電路設計的部分,首先以積體被動元件製程實現各式橋式T線圈做為測試電路,驗證橋式T線圈於電路模型與萃取方法之可行性。接著將橋式T線圈之設計應用於寬頻雙頻帶通濾波器之設計,藉以大幅縮小電路面積且不使頻寬減損。雙頻寬頻濾波器中心頻率皆設計為1.5 GHz,使得此寬頻雙頻帶通濾波器應用於無線通訊裝置之LTE系統,其中實現在印刷電路板時,電器尺寸為中心頻率下的0.52 λ0×0.475 λ0,雙頻帶之頻寬分別為106.5 %及33.8 %,於兩通帶中心頻率下之植入損耗各為0.36 dB及1.01 dB,通帶內反射損耗皆大於16 dB;實現於積體被動元件製程之電器尺寸為中心頻率0.015 λ0×0.024 λ0,頻寬分別為100.7 %及32.1 %,於兩通帶中心頻率下之植入損耗各為2.14 dB及3.64 dB,通帶內反射損耗皆大於15 dB;而以部份印刷電路板(PCB)和部分積體被動元件製程實現之電路電器尺寸為中心頻率下0.26 λ0×0.265 λ0,而頻寬分別為101.7 %及27.01 %,於兩通帶中心頻率下之植入損耗各為0.95 dB及1.97 dB,通帶內反射損耗皆大於13 dB。
    相較於既有的參考文獻,本研究利用橋式T線圈可以有效縮小電路尺寸,並且不減損頻寬,進而達成實現寬頻雙頻帶通濾波器之微型化設計,可助於將寬頻雙頻帶通濾波器在手持式之無線通訊裝置系統中有效應用。
    ;The target of this work is the design of wideband dual-band bandpass filter, and the circuit size can be largely reduced by using the bridged-T coils to substitute transmission line sections, such that the advantages of compact size and wide frequency bandwidth can both be achieved simultaneously. The bridged-T coil can be designed as a wideband transmission-line equivalent. It can be realized by a balanced inductor and metal-insulator-metal (MIM) capacitors in the integrated passive device (IPD) process with very compact circuit size. The bridged-T coil can be used to replace the required transmission line sections in wideband dual-band bandpass filter designs to achieve wideband using the IPD process.
    First of all, the test kits of bridge-T coils in IPD are implemented to demonstrate the design procedure and performance. They are applied to wideband dual-band bandpass filter designs to achieve compact size with no bandwidth reduction. The center frequency of the wideband dual-band bandpass filter designs are designed at f0 = 1.5 GHz, so that they can be applied to long term evolution (LTE) system of wireless communication devices. While the wideband dual-band bandpass filter is fabricated in printed circuit board (PCB), the circuit size of 0.52 λ0×0.475 λ0 at f0 = 1.5 GHz. The measured insertion loss at center frequency of passband is 0.36 dB and 1.01 dB (return loss > 16 dB), and the fractional bandwidth is 106.5 % and 33.8 %. While the wideband dual-band bandpass filter is fabricated in the integrated passive device (IPD) process, the circuit size of 0.015 λ0×0.024 λ0 at f0 = 1.5 GHz. The measured insertion loss at center frequency of passband is 2.14 dB and 3.64 dB (return loss > 15 dB), and the fractional bandwidth is 100.7 % and 32.1 %. While the wideband dual-band bandpass filter is fabricated in PCB and IPD, the circuit size of 0.26 λ0×0.265 λ0 at f0 = 1.5 GHz. The measured insertion loss at center frequency of passband is 0.95 dB and 1.97 dB (return loss > 13 dB), and the fractional bandwidth is 101.7 % and 27.01 %.
    Compared with conventional designs, the circuits are smaller in size with no bandwidth reduction by using bridged-T coils to implement transmission lines. The proposed wideband dual-band bandpass filter designs feature very compact size and wide bandwidth, and can be implemented in handheld wireless communication devices for mobile communication applications.
    Appears in Collections:[電機工程研究所] 博碩士論文

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