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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/69522

    Title: 以微波對多孔矽做消除晶格缺陷之相關研究
    Authors: 楊騎福;YANG,Chi-fu
    Contributors: 機械工程學系
    Keywords: 多孔矽;微波;microwave;porous silicon
    Date: 2016-01-26
    Issue Date: 2016-03-17 20:49:14 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 摘要

    The goal of this research is by using electrochemical etching to produce ultra-thin porous silicon layer. The layer can be used in the anti-reflection layer in the solar cell system. In the solar cell industry, the substrate can be divided to three different parts, which are single-crystal silicon, poly-silicon, and amorphous-silicon. The efficiency of the single-crystal silicon is the highest one. Therefore, we tried to use microwave (MW) technology to eliminate the defects of the porous-silicon. In this way, we can obtain a compact single-crystal silicon layer on the surface.
    The traditional way to recrystallization the layer should be process in high temperature above 1050 degree. Besides, it takes too much time and energy to do so. Therefore, in this experiment, we choose microwave to replace the traditional process, which can improve the quality of the layers and reduce the cost. After different periods of microwave process, we used SEM to observe the structure of the samples. Furthermore, X-ray diffraction results can show us the quality of the crystallization.
    Appears in Collections:[機械工程研究所] 博碩士論文

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