本研究以溶膠凝膠法搭配旋轉塗佈技術於玻璃基板上成長鋁鈦共摻氧化鋅薄膜，研究內容嘗試改變摻雜前驅物之濃度探討氧化鋅系薄膜之微結構、光學、腐蝕特性並應用於光電化學分解水。研究結果顯示:所有試片經熱處理後，由X光繞射圖分析得知：薄膜皆為六方晶系纖維鋅礦結構且無二次相產生，以c軸(c-axis)為優選方向，由掃描式電子顯微鏡觀察得知，氧化鋅薄膜經摻鋁(0~4 at.%)、摻鈦(0~4 at.%)及共摻(0.0 ~1.0 at.%鈦和1 at.%鋁)都皆有晶粒細化現象。經UV-Vis光譜穿透分析得知，摻鋁薄膜平均透光率約88 %、摻鈦者為90 %，共摻則約89%。薄膜之電阻率以四點探針量測結果顯示，氧化鋅摻1 at.%鋁之有一最低電阻率(約42 Ω cm)、摻0.5at.%鈦之薄膜有一最低電阻率(約47 Ω cm)，共摻1 at.%鋁與1 at.%鈦之薄膜則其電阻率則降至8.21 Ω cm。薄膜電化學性質上則以Tafel極化法來判斷材料抗腐蝕特性，結果顯示，隨鈦含量之增加則薄膜抗蝕性越佳。;In this study, we prepared the Al, Ti codoped ZnO thin film on glass substrates for photoelectrochemical (PEC) water splitting by sol-gel method using spin-coating technique. Effect of dopant concentrations on the microstructural, morphological, optical and electrochemical properties of ZnO-based thin films are investigated. Result from X-ray diffraction patterns, all samples belonged to wurtzite ZnO phase with a c-axis preferred orientation. Through scanning electron microscope, average particle size in TAZO decreased with increasing dopant content. Average optical transmittance measured by UV-Vis spectrophotometer indicated 88% for AZO, 90% for TZO and 89% for TAZO. The resistivity was measured at 42 Ω cm for AZO doped with 1 at.% Al, at 47 Ω cm for TZO doped with 0.5at.% Ti, at 8.21Ω cm for T1.00A1.0ZO co-doped 1 at.% Al with 1 at.% Ti analyzed by four-point probe. Through electrochemical measurements, we found that the dopant concentration of Al, Ti plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion.
