本論文針對目標額定崩潰電壓為150 V與閘極臨界電壓為-5 V之空乏型功率金屬氧化物半導體場效電晶體(Depletion-mode Power MOSFET)進行設計、製作流程模擬與測量結果分析。藉由模擬結果討論製程條件對元件的影響，以及製程條件之穩定度探討。使用的製程模擬軟體是TCAD，實際製程是在6吋的矽晶圓上完成。邊緣終端區的最佳化設計過程分成三個方向做崩潰電壓與邊緣終端區結構的分析：改變保護環(guard ring)之數量、主動區(active area)相對於第一個保護環之間距，以及場板(field plate)之有無，其最終結果崩潰電壓可達到150 V以上，以配合主動區之設計。本研究成功製作出崩潰電壓達171 V，閘極臨界電壓-5.56 V之元件。 此外，比較模擬結果與實際製作之元件量測數據，經由適當校正後萃取得到元件相關電性及物理參數，建構其等效電路之HSpice模型並使用適當的動靜態測電路，進行元件導通、耐壓、電容的特性模擬與分析比較，以便能夠在應用電路的模擬中使用。 ;This research demonstrated the design, analysis, simulation, and characterization of a depletion-mode Power MOSFET with the rated breakdown voltage of 150 V and threshold voltage of -5 V. Impacts of different process conditions on both breakdown voltages and threshold voltages have been discussed and investigated by the simulation using TCAD software. Process sensitivity was also taken account to match the real situation. Devices fabrication were performed on 6-inch silicon wafer and some of them were packaged in SOT-23 form. Moreover, the edge termination was discussed and simulated with considerations in number of guard rings, distance from active area to 1st guard ring and effect of field plate. The optimized design of termination showed breakdown voltage over 150 V, which met the target of active area region. By comparison of simulation results and measurement data, the electrical and physical parameters of MOSFET were extracted via appropriate procedure. An equivalent circuit for HSPICE model was proposed and combined with test circuits to demonstrate the performance of fabricated MOSFET. The simulation using proposed equivalent circuit includes the characteristics of conduction, breakdown and capacitance have been accomplished. Using TCAD device process/characteristics simulator and HSPICE circuit software to fully describe the characteristics of this device and bring an appropriate equivalent model so that application circuit design can be implemented successfully.
