一維奈米材料因其獨特的結構被受很大的關注，其蘊含極大潛能應用在電子、光學及磁性元件。多孔的陽極氧化鋁(anodic aluminum oxid,AAO)是最普遍地用來製作一維奈米材料的模板，但由於AAO模版非常脆弱難以組裝成堅固的元件。若有多孔矽模板來替代AAO模板，即可避開此困難。本論文闡述利用銅輔助化學蝕刻法製備奈米矽通道結構，而其結果不同於以往的電化學蝕刻法所得之形貌。利用此方法探討在矽晶內形成蟲洞似奈米通道的機理，並詳細分析了從銅沉積到矽蝕刻完成的具體流程，從各種不同實驗條件下，找出銅沉積與矽蝕刻之間規律性，由各條件下蝕刻出之孔洞結構中，最終得到了適合當作多孔矽模板之結構。;One-dimensional (1D) nanomaterials have attracted much attention due to the unique structure, which have found many potential applications in electronic, optical and magnetic devices. Porous anodic aluminum oxide (AAO) templates, are most frequently used to fabricate 1D materials and devices. However, the AAO templates are too fragile to be assembled into sturdy device. With porous silicon templates replacing the AAO templates, the dilemma of AAO template can be avoided. This paper describes fabricating nano tunnel of silicon by copper assisted etching. Compare with electrochemical etching, the results of etching appearance were different. We investigated the formation mechanism of the nano wormhole-like tunnel of silicon, and analyzed the process of nano-tunnel of silicon formation. In different condition, we find the regularity between deposition and etching. By the porous structures etched in various conditions, the porous silicon templates have been prepared.