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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72640

    Title: P型金屬氧化物薄膜的製備應用於軟性電子;Fabrication of P-Type Metal Oxide Thin Film for Flexible Electronics
    Authors: 王聖博;Wang, Sheng-Po
    Contributors: 電機工程學系
    Keywords: 金屬氧化物;氧化鋅;Metal Oxide;Zinc Oxide
    Date: 2016-10-12
    Issue Date: 2017-01-23 17:09:36 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 2005年的IEEE會議上提出了軟性電子的概念,希望能透過更加人性化的設計有效解決不易攜帶或硬質基板碎裂等議題。近年來,穿戴式電子產品的興盛毫無疑問地是引起了熱潮,軟性電子也勢必朝著輕、薄及透明等方面發展,然而,最常用於透明薄膜的ITO卻有著資源即將短缺等不穩定因素,使得資源豐富的氧化鋅成為炙手可熱的研究對象,因此,本論文也將氧化鋅選作為研究對象。
    ;In 2005, IEEE conference brought out the idea of flexible electronics, that could be much more humanity to solve the problem of rigid substrate fragmentation or hard to carry and other issues. Last few years, the rise of wearable electronics is undoubtedly caused a boom and flexible electronics will also bound towards more light, thin, transparent and other aspects of development. ITO, the most commonly used in transparent film, lacks in resources and is unstable. However, zinc oxide, that is resource-rich, becomes more popular in study. Therefore, the modulation doping of zinc oxide is the research object in this paper.
    This study focuses on the preparation of p-type zinc oxide powder doped by phosphorus pentoxide through thermal diffusion manner at different temperatures and environment. P-type zinc oxide powders were achieved. Subsequently, analysis the characteristics on the powders were carried out before hot pressing to make the bulk target and the sputtering process to study film properties by Hall measurement and Fourier transform infrared spectroscopy.
    Appears in Collections:[電機工程研究所] 博碩士論文

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