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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72641

    Title: 以快速熱熔融磊晶成長法製作 鍺錫合金PIN型光偵測器;GeSn PIN Photodetector on Silicon Substrate by Rapid-Melting-Growth Technique
    Authors: 李翼丞;Li, Yi-Cheng
    Contributors: 電機工程學系
    Keywords: 快速熱熔融磊晶成長法
    Date: 2016-10-12
    Issue Date: 2017-01-23 17:09:39 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 隨著光纖通訊系統迅速發展,矽鍺整合技術逐漸應用於電子元件與光電元件
    ;With the rapid development of optical fiber communication systems, the integration of germanium with silicon has attracted much attention for both electronic and photonic devices, taking the advantage of narrow band gap as well as high electron and hole mobility. On the other hand, germanium tin(GeSn) alloys was expected to improve the photo-response of a near-infrared photodetector. However the growth of single-crystalline GeSn alloys on silicon is very challenging because of the low equilibrium solubility (<1%) of Sn in Ge and the large lattice mismatch(greater than 4.2%)between silicon and GeSn alloys. Therefore, traditional GeSn alloys grown on silicon rely on ultra-high-vacuum chambers, which are expensive and time-consuming.
    In this article, we use rapid-melting-growth technique to grow GeSn alloys on silicon substrate, expect to get high-quality GeSn alloys. The as-grown GeSn alloys were employed for PIN photodetector devices. At the last, physical characteristics, including the I-V behavior, photoresponsibility, and materials quality were investigated by electrical analyzer, SEM, TEM and Raman spectroscopy.
    Appears in Collections:[電機工程研究所] 博碩士論文

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