隨著光纖通訊系統迅速發展，矽鍺整合技術逐漸應用於電子元件與光電元件 ，利用鍺的高電子及電洞遷移率與窄能帶的優點，很適合做為近紅外光偵測器。而在許多參考文獻中提到當鍺材料加入少量的錫元素，隨著錫濃度的改變，可以使鍺間接能隙材料轉換為鍺錫合金直接能隙材料，並證實在長波長下有更好的吸收係數，且提高其光響應率。但鍺錫合金整合於矽基板上存在著困難，因鍺錫合金與矽之間存在4.2％以上的晶格不匹配且鍺與錫之間有著低固態溶解度，所以一般會將鍺錫合金直接磊晶於矽基板上，但此方法需使用昂貴的超高真空機台，且磊晶成長慢、所需時間長，付出的製程成本相對來的大。 本論文以快速熱熔融磊晶成長法作為基本架構，並改良傳統的快速熱熔融磊晶成長法，將省略晶種視窗區，採用兩段式快速熱退火，期望有效得到良好的高品質鍺錫合金，再以此磊晶成長法製作垂直式PIN型鍺錫合金光偵測器，而此磊晶方法較一般高真空機台更簡單快速且可降低成本。最後使用1310nm與1550nm波段的雷射光進行光暗電流的直流量測分析，並利用SEM、TEM及Raman光譜進行材料分析。 ;With the rapid development of optical fiber communication systems, the integration of germanium with silicon has attracted much attention for both electronic and photonic devices, taking the advantage of narrow band gap as well as high electron and hole mobility. On the other hand, germanium tin(GeSn) alloys was expected to improve the photo-response of a near-infrared photodetector. However the growth of single-crystalline GeSn alloys on silicon is very challenging because of the low equilibrium solubility (<1%) of Sn in Ge and the large lattice mismatch（greater than 4.2％）between silicon and GeSn alloys. Therefore, traditional GeSn alloys grown on silicon rely on ultra-high-vacuum chambers, which are expensive and time-consuming. In this article, we use rapid-melting-growth technique to grow GeSn alloys on silicon substrate, expect to get high-quality GeSn alloys. The as-grown GeSn alloys were employed for PIN photodetector devices. At the last, physical characteristics, including the I-V behavior, photoresponsibility, and materials quality were investigated by electrical analyzer, SEM, TEM and Raman spectroscopy.
