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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7272

    Title: 氮化銦鎵?氮化鎵多層量子井發光二極體之電性研究;The electrical properties of InGaN/GaN MQWs LED
    Authors: 曾國偉;Kuo-Uei Tseng
    Contributors: 物理研究所
    Keywords: 氮化銦鎵?氮化鎵;多層量子井;電容電壓量測;MQW;C-V;InGaN/GaN
    Date: 2002-06-07
    Issue Date: 2009-09-22 10:53:57 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本篇論文主要是針對氮化銦鎵?氮化鎵多層量子井發光二極體(In0.23Ga0.77N/GaN MQWs LED)的結構以電容電壓量測與導納量測探討其電性。 在本研究中,主要是利用電容電壓量測檢測多層量子井中的載子分佈情形。並分析在不同溫度與量測頻率的條件下,載子凍結與樣品所含的缺陷對於電容電壓量測之影響。另外,利用空乏近似法的計算來模擬電容電壓譜線,並探討在氮化銦鎵?氮化鎵異質結構中所產生的壓電場效應,對於多層量子井的能帶結構與載子分佈所帶來的影響。 而由導納量測的結果發現,樣品中含有來自於n型摻雜的矽(Si)、p型摻雜的鎂(Mg)和一個可能與氮空缺(N-vacancy)有關的缺陷。 We use capacitance-voltage measurement and admittance spectroscopy to study the electrical properties of InGaN/GaN MQWs LED. We use C-V measurement to study the carrier distribution of MQWs. And we analyze the influence of the carrier freeze-out and defect on the different temperature and frequency C-V measurement. Besides, we study the influence of piezoelectric field on the band profile and carrier distribution of MQWs by depletion approximation. Then we found the n type dopant (Si), the p type dopant (Mg), and the defect N-vacancy related with admittance measurement.
    Appears in Collections:[物理研究所] 博碩士論文

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