低溫成長氮化鎵薄膜之特性研究; Material Characterizations of Low temperature grown GaN films

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/7322

Title:	低溫成長氮化鎵薄膜之特性研究;Material Characterizations of Low temperature grown GaN films
Authors:	陳松昇;song-sang chen
Contributors:	物理研究所
Keywords:	低溫成長的氮化鎵;LT-GaN
Date:	2003-07-10
Issue Date:	2009-09-22 10:55:14 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本篇論文是研究低溫成長氮化鎵之材料特性：包括以霍爾量測法檢視其電性；以光激發光及吸收光譜檢視其光性：以X光繞射法檢視其晶體結構。並以原子力顯微鏡量測的結果作其在電性、光性及內部結構之佐證。另外並以高溫爐或是快速熱退火改變試片之熱處理條件，或以離子佈植的方式改變試片原有之特性。 This issue is discovered the material characterizations of low temperature growth GaN films:including electricity,optical properties,structure.
Appears in Collections:	[Graduate Institute of Physics] Electronic Thesis & Dissertation

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