ㄧ般而言，以電化學法製造N型多孔矽必須外加光源照射矽晶圓，以達電子-電洞對分離，產生電洞，才能進行蝕刻。另一方面，在近期研究指出使用外加電場、磁場或是P-N接面方式可暗室製造N型多孔矽。本研究應用金屬-半導體接面原理，以銅片電極為金屬端，N-Type矽晶圓為半導體端，在順向偏壓下使空間電荷區變薄，使得電子-電洞對分離，實現不以任何光源輔助即可蝕刻出N型多孔矽。另外，研究中發現使用1064nm雷射輔助蝕刻，發現能使多孔矽表面以及光激發光現象更為均勻。;In general, N-type Si must be illuminated in order to drive electrochemical etching, light generates electron-hole pairs. On the other hand, there are there novel methods to assist hole generation and enhance the growth porous silicon on n-type silicon in the dark, respectively, added electric field, magnetic field, P-N junction. This study is based on the principle of metal-semiconductor junction, the copper electrode is the metal side, the N-Type silicon wafer is the semiconductor side, and the space charge region is thinned under the forward bias, so that the electron-hole pairs are separated, to achieve without any auxiliary light source can be etched N-type porous silicon. In addition, the study found that the use of 1064nm laser-assisted etching, porous silicon surface and the phenomenon of light excitation can be more uniform.
