;This paper focuses on the thin line optimization method for the electrode totem when the thin film transistor LCD is used in the lithography process. In the past, only the exposure dose of the exposure machine was used to adjust and control the accuracy of the product when the lithography process, so that the product accuracy was lower than our expected. The method provided in this paper not only uses the exposure energy, but also experiments on the thickness of the photoresist and the development time to optimize the line precision from 3.5 μm to 3.25 μm and maintain the yield at 97.5% or more.
