在本篇論文中，我們開發全新的三角型網格模組，並對於半導體元件進行模擬，為了能夠更加提升模擬的精確性以及模擬時的任意適用性，我們開發出了二維的重心版模組，並且使用軸線法對其進行計算該三角形模組的電場、電子流密度與電洞流密度。這之中也利用了理論電阻值來驗證模擬電阻值還有模擬PN二極體之特性曲線與物理特性比較，來加以佐證我們所開發出的模組之精確性，在最後再探討本篇所開發之模組在未來的應用。;In this thesis, we have successfully developed a new triangle mesh model by using the axis method for simulating semiconductor devices. To increase the accuracy and the flexibility for the simulation, we developed the 2D barycenter module to calculate the electric field, diffusion current and drift current. Furthermore, the simulated resistance are compared to the theoretical value for verification. The axis method is also applied to the PN diode I-V characteristics. Finally we investigate the future applications for the module.
