本研究是以金屬輔助蝕刻法將銅顆粒為催化劑及HF/H2O2為蝕刻液，在特定的蝕刻時間和電流密度下在各種環境（暗室、日光燈和UV燈）中蝕刻P型矽晶片，以討論其對矽納米結構和光致發光的影響。 我們發現在UV燈照射下深度的蝕刻速率非常慢，但是獲得了緻密的納米結構；此外，在暗室蝕刻和日光燈的照射下，MACE蝕刻存在光致發光現象。 ;This research focuses on the metal assistance chemical etching which the copper particles is as the catalyst and HF/H2O2 is the electrolyte. We etched a P-type wafer at various environment (darkroom, luminescence lamp, and UV lamp) at a specificial etching time and current density to discuss its influence on silicon nanostructure and photoluminescence. We discovered the etching rate in depth is very slow under the UV lamp illumination but obtained a densed nanostructure. Moreover, there is a photoluminescence phenomenon while MACE etching was under darkroom etching and the illumination of luminescence lamp.
