本論文分為兩個部分，第一個部分為使用UMC 0.18µm CMOS製程研製2.5Gbps雷射二極體驅動電路，所設計之2.5Gbps雷射二極體驅動電路包括：2.5Gbps雷射二極體驅動電路、2.5Gb/s低電壓差動訊號雷射驅動電路；而在第二部分為使用tsmc 0.18µm CMOS製程研製2.4/5.2GHz雙頻射頻接收器，所設計之CMOS 射頻積體電路包括：2.4/5.2GHz雙頻低雜訊放大器、5.2GHz微混頻器。 在第一部分中，所設計之晶片皆採用高頻探針方式進行量測。其中2.5Gbps雷射二極體驅動電路量測結果如下：傳輸速率可達3Gbps、調變電流為34mA、增益約為10dB、輸出返射損耗小於-10dB、最大輸出波形約為0.85Vpp。而在2.5Gb/s低電壓差動訊號雷射驅動電路，其量測結果如下：傳輸速率可達5Gbps、調變電流為3mA、增益約為11.5dB、輸入返射損耗與輸出返射損耗皆小於-10dB、最大輸出波形約為0.1Vpp。 論文的第二部分中，2.4/5.2GHz雙頻低雜訊放大器晶片採用打線至玻璃纖維基板上進行量測，其結果如下：在2.4GHz增益約為5.03dB、輸入返射損耗約為5.68dB、輸出返射損耗約為10.93dB；而在5.2GHz增益約為4.27dB、輸入返射損耗約為5.32dB、輸出返射損耗約為25.41dB。而5.2GHz微混頻器其射頻頻率為5.2GHz、本地振盪頻率為5.19GHz，混頻後可得中頻頻率為10MHz，晶片量測採用高頻探針方式，其結果如下：當本地振盪端功率為-8dBm時，其轉換增益為4.95dB、輸入1dB壓縮點為-8dBm、輸出與輸入三階交互調變交錯點分別約為-5dBm及-3dBm、本地振盪端至射頻端間隔離度約為32.78dBm、本地振盪端至中頻端間隔離度約為26.27dBm、射頻端至中頻端間隔離度約為22.56dBm。 This thesis distribute into two parts. The first part of the thesis is the development of 2.5Gbps laser driver in a UMC 0.18µm CMOS process. The design of 2.5Gbps laser driver circuit includes a 2.5Gbps laser driver and a 2.5Gbps low voltage differential signals laser driver. The second part of the thesis is the development of 2.4/5.2GHz dual-band RF receiver in a tsmc 0.18µm CMOS process. The design of CMOS RF receiver circuit includes a 2.4/5.2GHz dual-band low noise amplifier and 5.2GHz micromixer. The chip is on-chip measurement in first part. The 2.5Gbps laser driver exhibits a data rate of 3Gbps, modulation current of 34mA, gain of 10dB, output return loss smaller than -10dB and maximum output voltage swing of 0.85 Vpp. The 2.5Gbps low voltage differential signals laser driver exhibits a maximum data rate of 5Gbps, modulation current of 3mA, gain of 11.5dB, input and output return loss smaller than -10dB and maximum output voltage swing of 0.1 Vpp. The 2.4/5.2GHz dual-band low noise amplifier is using the method of bonding die to printed circuit board. The 2.4/5.2GHz dual-band low noise amplifier exhibits a linear gain of 5.03dB, input return loss of 5.68dB and output return loss of 10.95dB at 2.4GHz, and a linear gain of 4.27dB, input return loss of 5.32dB and output return loss of 25.41dB at 5.2GHz. The 5.2GHz micromixer is using the method of on-chip. The 5.2GHz micromixer exhibits a conversion gain of 4.95dB, input 1dB compression point of -8dBm, output third-order inter-modulation intercept point of -5dBm, input third-order inter-modulation intercept point of -3dBm, local oscillator to radio frequency isolation of 32.78dB, local oscillator to intermediate frequency isolation of 26.27dB, radio frequency to intermediate frequency isolation of 22.56dB.
