用泰勒級數求四面體內部向量及三維元件模擬;Finding internal vector from the Taylor series in tetrahadron element for 3D semiconductor device simulation

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Title:	用泰勒級數求四面體內部向量及三維元件模擬;Finding internal vector from the Taylor series in tetrahadron element for 3D semiconductor device simulation
Authors:	李怡瑩;Li, Yi-Ying
Contributors:	電機工程學系
Keywords:	泰勒級數;半導體元件;元件模擬
Date:	2019-07-19
Issue Date:	2019-09-03 15:52:15 (UTC+8)
Publisher:	國立中央大學
Abstract:	本篇論文中，主要是利用泰勒級數法開發一個四面體網格模組，並且用來模擬元件的特性，而為了能夠使模組可以以任意四面體當基本網格，我們選擇以重心來開發模組。根據我們的分析，在與其他方法進行比較後，我們發現泰勒級數法能夠完美的克服以往所遇見的問題，故我們選擇泰勒級數法來求得方程式裡所需要的四面體內部電場向量，完成程式模組後，設定四面體座標與電位，並且驗證此四面體的電場、電子流與電洞流，再來，將五顆四面體組合成一個單顆立方體電阻，比較其模擬值與計算出的理論值，以確認模組開發的精確性。最後，嘗試以兩種不同方法串接多顆立方體電阻時所發現的誤差，並探討其原因。;In this thesis, we develop a tetrahedron element module by using the Taylor series and use it to simulate 3D semiconductor device. In order to enable this module to be applied to arbitrary tetrahedron, we choose barycenter method to develop the module. According to our analysis, after comparing with other methods, we find that the Taylor series can overcome the problem in the past, so we choose the Taylor series to find the internal electric field vector. After completing the module, set the coordinates and potentials of the tetrahedron, and verify the electric field, the electron current density, and the hole current density. Then, the five tetrahedrons are combined into a cube resistor, and compare the simulated value with the theoretical value to confirm the accuracy of the module development. Finally, try to find the error when connecting multiple cube resistors in two different ways and discuss the reason.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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