深冷電化學矽晶表面以產生奈米晶之研究;Fabrication of Nanocrystal by Cryogenic Electrochemical Anodic Etching on Silicon Substrate

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Title:	深冷電化學矽晶表面以產生奈米晶之研究;Fabrication of Nanocrystal by Cryogenic Electrochemical Anodic Etching on Silicon Substrate
Authors:	呂承穎;Lu, Cheng-Ying
Contributors:	機械工程學系
Keywords:	電化學蝕刻;多孔矽;奈米晶粒;光致發光
Date:	2019-07-04
Issue Date:	2019-09-03 16:30:48 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究為在重摻本研究為在重摻本研究為在重摻 P型矽晶圓上進行型矽晶圓上進行型矽晶圓上進行深冷電化學蝕刻深冷電化學蝕刻深冷電化學蝕刻，輔以雷射光，輔以雷射光照，觀察低溫狀態對其變化影響。因矽晶片載子遷移率矽晶片載子遷移率矽晶片載子遷移率在室溫約為 120 (cm2/V•s)、-20 ℃時為 108(108(108(108(cm2/V•s)，隨著溫度下降遷移率也之隨著溫度下降遷移率也之隨著溫度下降遷移率也之隨著溫度下降遷移率也之減少。因此本實驗設計於室溫於室溫 (25 ℃)、-20 ℃(乾冰 )環境下進行環境下進行，使用掃描式電子顯微鏡用掃描式電子顯微鏡用掃描式電子顯微鏡用掃描式電子顯微鏡 (SEM)與穿透式電子顯微鏡與穿透式電子顯微鏡與穿透式電子顯微鏡 (TEM) 觀察其多孔觀察其多孔矽結構及晶格變化晶格變化，並使用光激發譜儀並使用光激發譜儀並使用光激發譜儀並使用光激發譜儀 (PL)分析其特性。經實驗分析其特性。經實驗分析其特性。經實驗發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，發現溫度越低其奈米晶粒小，電化學蝕刻後光譜電化學蝕刻後光譜電化學蝕刻後光譜電化學蝕刻後光譜也有藍移的現象產也有藍移的現象產也有藍移的現象產也有藍移的現象產生;In this study, we perform cryogenic laser-assisted electrochemical etching on heavily doped p-type silicon wafer, and observe the influence of low temperature. Since the carrier mobility of silicon wafer is about 120(cm2/V•s) at room temperature, 108(cm2/V•s) at -20℃, the mobility reduces while temperature decrease. Therefore, the etching experiments are performing at room temperature(25℃),-20℃(dry ice), and using scanning electron microscope(SEM), transmission electron microscope(TEM) and photoluminescence(PL) to observe the structure and characteristics of porous silicon. We find that the lower the temperature, the smaller the nanocrystals grain, and the phenomenon of blue-shift is shown in the result of PL.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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