此數值模擬進行了一系列，以不同cusp磁場比例與晶體 - 坩堝旋轉條件，探討Czochralski長晶過程中對流場，溫度和氧輸送的影響。對於5英吋晶體尺寸的生長進行軸對稱2D模擬。在cusp磁場（CMF）的不同磁比（MR）下，以四種不同的晶體和坩堝旋轉條件比較10mm長的晶體生長。 數值結果說明，在不同的cusp磁場比例下，固液界面的氧含量受到不同晶體和坩堝旋轉條件產生的熔體流動顯著影響。固液界面的氧含量在低反向和同向旋轉下濃度增加，高反向和同向旋轉配合氧濃度隨著MR增加而降低。通過在低坩堝旋轉情況下使用反向旋轉條件，可以獲得沿c-m界面的低氧含量。由於矽熔體中的流動和熱場影響，高坩堝旋轉情況下的氧濃度具有兩種不同的趨勢。底壁附近的高速流動導致氧原子沿坩堝側壁移動得更快，並在自由熔化表面上蒸發得更多。 ;A series of numerical simulation has been performed to clarify the effects of different cusp-magnetic ratios on the flow, temperature, and oxygen transport under different combinations of crystal-crucible rotation conditions during the Czochralski growth process. The axi-symmetric 2D global simulations were conducted for the growth of 5-inch silicon crystal. Four different crystal and crucible rotation conditions under different magnetic ratios (MRs) of cusp-magnetic field (CMF) were numerically compared of a 10 mm long crystal growth. The results show that oxygen content along the crystal-melt interface is significantly affected by the melt flow motion generated by different crystal and crucible rotation conditions with different cusp-magnetic ratios. The oxygen content along crystal-melt interface increases at low crucible counter- and iso-rotation rates but decreases at high crucible counter- and iso rotation rates with increasing MRs. Low oxygen content along crystal-melt interface can be obtained by using counter-rotation condition at low crucible rotations. Oxygen concentration at high crucible rotation cases has two different tendency due to the effect of flow and thermal field in the silicon melt. Higher speed flow motion near bottom wall leads oxygen atoms to move faster along the crucible side wall and evaporates more at the free-melt surface.
